MOSFET with Diode
Ideal n-channel model of a Metal Oxyde Semiconductor Field Effect Transistor (MOSFET) with an anti-parrallel Diode.
- is opened if its gate(control input signal) is equal to zero,
- can conduct a current from Drain to Source (or from Source to Drain) if its gate (set by the control signal) is different than zero.
Since this device is composed of multiple sub-devices, it is slower than an ideal switch.
The current measured by the current scope is the total current entering the Drain/Cathode pin.
See this documentation for more information on thermal data.
Electrical > Semiconductors
|Gate||Gate (Control Input)|
|Ron||MOSFET On-Resistance value, in Ohm|
|Rdon||Diode Resistance value, in Ohm|
|Vdf||Diode Forward Voltage, in V|